Reduction of debris adhesion and increasing the process performance by SF
6 assist laser processing of silicon wafer was investigated. It is observed that debris adhesion was drastically reduced when SF
6 gas was used to compare the case of He gas. Shadow graphic imaging experiments were shown a density contrast region in expanded gases, which would indicate the evaporation of silicon particles by chemical reaction with SF
6 and silicon particles at the plasma-heating region. We found that process performance of SF
6 assist laser processing was higher than the He assist processing, and debris adhesion was suppressed effectively in case where the intense plasma was formed during processing.
View full abstract